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Appendix A - Technical Specifications
All values are at 25°C unless otherwise specified.
Parameter
Peak test current into S/C
Peak test voltage across O/C
Transistor gain range (H
Transistor gain accuracy
Transistor V
CEO
Transistor V
accuracy
BE
V
for Darlington
BE
V
for Darlington (shunted)
BE
Acceptable transistor V
Base-emitter shunt threshold
BJT collector test current
BJT acceptable leakage
MOSFET gate threshold range
MOSFET threshold accuracy
MOSFET drain test current
MOSFET gate resistance
Depletion drain test current
JFET drain-source test current
SCR/Triac gate test current
SCR/Triac load test current
Diode test current
Diode voltage accuracy
V
for LED identification
F
Short circuit threshold
Battery type
Battery voltage range
Battery warning threshold
Dimensions (body)
1.
Between any pair of test clips.
2.
Collector current of 2.50mA. Gain accuracy valid for gains less than 2000.
3.
Resistance across reverse biased base-emitter > 60kΩ.
4.
Resistance across reverse biased base-emitter < 60kΩ.
5.
Drain-source current of 2.50mA.
6.
Collector-emitter voltage of 5.0V.
7.
Thyristor quadrant I, Triac quadrants I and III.
8.
BJT with no shunt resistors.
)
FE
test voltage
BE
Min
-5.5mA
-5.1V
4
±3% ±5 H
2.0V
-2%-20mV
0.95V
0.75V
50kΩ
2.45mA
2.50mA
0.1V
-2%-20mV
2.45mA
2.50mA
8kΩ
0.5mA
0.5mA
4.5mA
5.0mA
-2%-20mV
1.50V
MN21 / L1028 / GP23A 12V Alkaline
7.50V
103 x 70 x 20 mm
Please note, specifications subject to change.
Seite 25
November 2012 – Ausgabe 10
Typ
Max
5.5mA
5.1V
20000
FE
3.0V
+2%+20mV
1.00V
1.80V
0.80V
1.80V
1.80V
60kΩ
70kΩ
2.55mA
0.7mA
5.0V
+2%+20mV
2.55mA
5.5mA
5.5mA
5.0mA
+2%+20mV
4.00V
10Ω
12V
8.25V
Note
1
1
2
2,8
2
8
3
4
6
5
5
7
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